Sputtering and the annealing of radiation damage in single crystal semiconductors
Single crystals of germanium, silicon and indium antimonide were bombarded with medium energy (5, 10, 15 keV) rare gas ions and the effects arising from the interaction of these ions with target atoms studied. Incidence of energetic ions in the crystal is followed by ejection of lattice atoms from their normal positions. The ejection of atoms from the bombarded surface was studied with two methods, namely the sputtered atom ejection pattern technique and monitoring of the sputtering...[Show more]
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