A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
There are a number of existing models for estimating the charge states of defects in silicon. In order of increasing complexity, these are (a) the Fermi-Dirac distribution, (b) the Shockley-Last model, (c) the Shockley-Read-Hall model, and (d) the Sah-Shockley model. In this work, we demonstrate their consistency with the general occupancy ratio α, and show that this parameter can be universally applied to predict the charge states of both monovalent and multivalent deep levels, under either...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Sun et al A Unified Approach to Modelling 2015.pdf||1.88 MB||Adobe PDF|
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