Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling
Characterizing the surface recombination of a silicon wafer is commonly performed by measuring the effective lifetime of a symmetrically processed sample and using simplified analytical models to derive a characteristic property of the recombination, such as the surface recombination factor J0s. The most widely used method is based on QSSPC measurements which require large, homogeneously processed areas and is valid only for uniform carrier distributions throughout the thickness of the...[Show more]
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|Fell A et al Quantitative surface recombination 2014.pdf||3.69 MB||Adobe PDF|
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