Black, Lachlan E.; Kho, Teng C.; McIntosh, Keith R.; Cuevas, Andres
We compare the passivation provided by Al2O3 deposited on planar <100> and <111>, and textured <100>, boron-diffused and
undiffused crystalline silicon surfaces. The passivation of <111> surfaces is found to be somewhat worse than that of <100>
surfaces for the as-deposited films, but improves to similar values after annealing. Higher recombination at textured surfaces
compared to planar <111> surfaces can be largely, though not entirely, attributed to the difference in surface area....[Show more]
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