Zhang, Xinyu; Cuevas, Andres; Demaurex, Bénédicte; De Wolf, Stefaan
This work shows that RF sputter-deposited hydrogenated amorphous silicon (a-Si:H) films are very effective in passivating
silicon surfaces. We have previously found that sputter-deposited 45 nm thick intrinsic a-Si:H provides outstanding surface
passivation on n-type silicon, similar to that achieved by ‘classic’ plasma enhanced chemical vapour deposition . In this paper,
we show that p-type silicon surfaces can be well passivated as well, achieving effective carrier lifetimes of 1.1 ms...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.