Sputtered hydrogenated amorphous silicon for silicon heterojunction solar cell fabrication
This work shows that RF sputter-deposited hydrogenated amorphous silicon (a-Si:H) films are very effective in passivating silicon surfaces. We have previously found that sputter-deposited 45 nm thick intrinsic a-Si:H provides outstanding surface passivation on n-type silicon, similar to that achieved by ‘classic’ plasma enhanced chemical vapour deposition . In this paper, we show that p-type silicon surfaces can be well passivated as well, achieving effective carrier lifetimes of 1.1 ms...[Show more]
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