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Tunnel junctions in a III–V nanowire by surface engineering

Nadar, Salman; Rolland, Chloé; Lampin, Jean-François; Wallart, Xavier; Caroff, Philippe; Leturcq, Renaud

Description

We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization...[Show more]

CollectionsANU Research Publications
Date published: 2015-03
Type: Journal article
URI: http://hdl.handle.net/1885/13406
Source: Nano Research
DOI: 10.1007/s12274-014-0579-8

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