Zhang, Guogang; Zhuang, Zhe; Guo, Xu; Ren, Fang-Fang; Liu, Bin; Ge, Haixiong; Xie, Zili; Sun, Ling; Zhi, Ting; Tao, Tao; Li, Yi; Zheng, Youdou; Zhang, Rong
InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer...[Show more]
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