Skip navigation
Skip navigation

Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides

Yan, Kunlun; Vu, Khu; Madden, Steve

Description

Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

CollectionsANU Research Publications
Date published: 2015-02-24
Type: Journal article
URI: http://hdl.handle.net/1885/13283
Source: Optics letters
DOI: 10.1364/OL.40.000796

Download

There are no files associated with this item.


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator