Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides
Yan, Kunlun; Vu, Khu; Madden, Steve
Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.
|Collections||ANU Research Publications|
There are no files associated with this item.
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator