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Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides

Yan, Kunlun; Vu, Khu; Madden, Steve


Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

CollectionsANU Research Publications
Date published: 2015-02-24
Type: Journal article
Source: Optics letters
DOI: 10.1364/OL.40.000796


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