Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure
Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH₃) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH₃ plasma exposure causes (i) an increase in the density of Si≡N₃ groups in both SiNx and a-Si films, (ii) a...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Wan et al Recombination and Thin Film Properties 2015.pdf||1.21 MB||Adobe PDF|
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