Wan, Yimao; McIntosh, Keith R.; Thomson, Andrew F.; Cuevas, Andres
Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH₃) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH₃ plasma exposure causes (i) an increase in the density of Si≡N₃ groups in both SiNx and a-Si films, (ii) a...[Show more]
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