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Degradation of the surface passivation of plasma-assisted ALD Al₂O₃ under damp-heat exposure

Liang, Wensheng; Suh, Dongchul; Yu, Jun; Bullock, James; Weber, Klaus J.


The effect of humidity on boron diffused and undiffused silicon samples passivated by aluminum oxide (Al₂O₃) synthesized by plasma-assisted atomic layer deposition (PA-ALD) is investigated. It is found that samples exposed to a saturated humidity ambient show a much higher degradation rate than those exposed to 85% relative humidity (RH). The surface recombination velocity Seff increased by 25% for RH = 85% but by more than two orders of magnitude for 100% RH after 10 days of exposure....[Show more]

CollectionsANU Research Publications
Date published: 2014-07-18
Type: Journal article
Source: Physica Status Solidi. A
DOI: 10.1002/pssa.201431256


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