Degradation of the surface passivation of plasma-assisted ALD Al₂O₃ under damp-heat exposure
The effect of humidity on boron diffused and undiffused silicon samples passivated by aluminum oxide (Al₂O₃) synthesized by plasma-assisted atomic layer deposition (PA-ALD) is investigated. It is found that samples exposed to a saturated humidity ambient show a much higher degradation rate than those exposed to 85% relative humidity (RH). The surface recombination velocity Seff increased by 25% for RH = 85% but by more than two orders of magnitude for 100% RH after 10 days of exposure....[Show more]
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi. A|
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