Synthesis of Germanium-Tin Alloys by Ion Implantation and Pulsed Laser Melting: Towards a Group IV Direct Band Gap Semiconductor
The germanium-tin (Ge1-xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 𝑎𝑡.%. Hence there has been much interest in preparing such alloys since they are compatible with silicon and they raise the possibility of integrating photonics functionality into silicon circuitry. However, the maximum solid solubility of Sn in Ge is around 0.5 𝑎𝑡.% and non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour...[Show more]
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