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Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory

Nandi, Sanjoy Kumar

Description

Transition metal oxides (TMOs) exhibit characteristic resistance changes when subjected to high electric fields due to the creation, drift and diffusion of defects, and this resistive-switching response is of interest for future non-volatile memory applications. Indeed, resistive random access memories (ReRAM) are considered promising alternatives to conventional charge storage-based devices because of their low production cost, simple fabrication, and...[Show more]

CollectionsOpen Access Theses
Date published: 2017
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/116869

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