Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory
Transition metal oxides (TMOs) exhibit characteristic resistance changes when subjected to high electric fields due to the creation, drift and diffusion of defects, and this resistive-switching response is of interest for future non-volatile memory applications. Indeed, resistive random access memories (ReRAM) are considered promising alternatives to conventional charge storage-based devices because of their low production cost, simple fabrication, and...[Show more]
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