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InP Nanowires grown by Selective-Area Metalorganic Vapour Phase Epitaxy

Gao, Qian


Semiconductor nanowires have attracted significant attention over the past decade. InP nanowires, with a direct bandgap and high electron mobility, are suitable materials for many electronic and optoelectronic devices. Several techniques have been used to grow InP nanowires, and among them, selective-area metalorganic vapour phase epitaxy (SA-MOVPE) is a versatile and powerful method owing to its advantages of being catalyst free, and its ability to produce...[Show more]

CollectionsOpen Access Theses
Date published: 2016
Type: Thesis (PhD)
DOI: 10.25911/5d74e1c00372f


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