Semiconductor nanowires have attracted significant attention over
the past decade. InP nanowires, with a direct bandgap and high
electron mobility, are suitable materials for many electronic and
optoelectronic devices. Several techniques have been used to grow
InP nanowires, and among them, selective-area metalorganic vapour
phase epitaxy (SA-MOVPE) is a versatile and powerful method owing
to its advantages of being catalyst free, and its ability to
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