Skip navigation
Skip navigation

InP Nanowires grown by Selective-Area Metalorganic Vapour Phase Epitaxy

Gao, Qian


Semiconductor nanowires have attracted significant attention over the past decade. InP nanowires, with a direct bandgap and high electron mobility, are suitable materials for many electronic and optoelectronic devices. Several techniques have been used to grow InP nanowires, and among them, selective-area metalorganic vapour phase epitaxy (SA-MOVPE) is a versatile and powerful method owing to its advantages of being catalyst free, and its ability to produce...[Show more]

CollectionsOpen Access Theses
Date published: 2016
Type: Thesis (PhD)


File Description SizeFormat Image
Gao Thesis 2017.pdf6.68 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator