Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime
The motivation for this study is twofold: i) from a fundamental perspective, to further investigate and understand porosity in group IV-IV and group III-V semiconductors and its dependence on ion fluence, temperature, and stoichiometry using multi-characterization techniques including electron microscopy (SEM and TEM), surface profiling, Rutherford backscattering (RBS), Raman Spectroscopy (RS) and Small Angle X-ray scattering (SAXS); and ii) to assist in...[Show more]
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