Nanoindentation-Induced phase transformations in amorphous Germanium
Semiconductors were traditionally considered to be classic ‘brittle’ materials, which under indentation load behave elastically until undergoing sudden and generally catastrophic failure via cracking. However, under certain conditions it is clear that many semiconductors also undergo considerable plastic deformation. Such plastic deformation mechanisms in semiconductor materials include defect generation and propagation, and under point loading, phase...[Show more]
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