Skip navigation
Skip navigation

Defect engineering of InP and InGaAs for optoelectronic applications

Carmody, Christine Yvette


InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength technology, in particular the 1.3 and 1.5 5 μm emissions that are achievable in lattice matched InGaAs/InP systems, which can be transmitted through optical fibre with low signal loss for long distance...[Show more]

CollectionsOpen Access Theses
Date published: 2003-06
Type: Thesis (PhD)


File Description SizeFormat Image
b21977720-carmody.c.y.pdf5.78 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator