Defect engineering of InP and InGaAs for optoelectronic applications
InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength technology, in particular the 1.3 and 1.5 5 μm emissions that are achievable in lattice matched InGaAs/InP systems, which can be transmitted through optical fibre with low signal loss for long distance...[Show more]
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