The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material
The potentials of Sn, In, or Al doped ZnSb thin film as candidates for phase change materials have been studied in this paper. It was found that the Zn-Sb bonds were broken by the addition of the dopants and homopolar Zn-Zn bonds and other heteropolar bonds, such as Sn-Sb, In-Sb, and Al-Sb, were subsequently formed. The existence of homopolar Sn-Sn and In-In bonds in Zn₅₀Sb₃₆Sn₁₄ and Zn₄₁Sb₃₆In₂₃ films, but no any Al-Al bonds in Zn₃₅Sb₃₀Al₃₅ film, was confirmed. All these three amorphous films...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01 Chen Y et al The feasibility of Sn 2016.pdf||761.46 kB||Adobe PDF|
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