Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature
Rutherford Backscattering Spectrometry/Channeling and Extended X-ray Absorption Fine Structure measurements have been combined to investigate the amorphization of InₓGa₁ˍₓP alloys at 15 and 300 K for selected stoichiometries representative of the entire stoichiometric range. The amorphization kinetics differs considerably for the two temperatures: at 15 K, the amorphization kinetics of InₓGa₁ˍₓP is intermediate between the two binary extremes while at 300 K, InₓGa₁ˍₓP is more easily amorphized...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Hussain_Ion-implantation-induced_2016.pdf||1.49 MB||Adobe PDF|
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