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Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature

Hussain, Z. S.; Wendler, E.; Wesch, W.; Schnohr, C. S.; Ridgway, M. C.

Description

Rutherford Backscattering Spectrometry/Channeling and Extended X-ray Absorption Fine Structure measurements have been combined to investigate the amorphization of InₓGa₁ˍₓP alloys at 15 and 300 K for selected stoichiometries representative of the entire stoichiometric range. The amorphization kinetics differs considerably for the two temperatures: at 15 K, the amorphization kinetics of InₓGa₁ˍₓP is intermediate between the two binary extremes while at 300 K, InₓGa₁ˍₓP is more easily amorphized...[Show more]

CollectionsANU Research Publications
Date published: 2016-05-17
Type: Journal article
URI: http://hdl.handle.net/1885/108671
Source: Journal of Applied Physics
DOI: 10.1063/1.4950697

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