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Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride

Allen, Thomas G.; Wan, Yimao Y.; Cuevas, Andres

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Advances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of...[Show more]

dc.contributor.authorAllen, Thomas G.
dc.contributor.authorWan, Yimao Y.
dc.contributor.authorCuevas, Andres
dc.date.accessioned2016-09-07T06:18:19Z
dc.date.available2016-09-07T06:18:19Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/108664
dc.description.abstractAdvances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNₓ). On 1.6 Ωcm p-type wafers, we measure an improvement in the upper limit surface recombination velocity (Seff,UL) from 2.5 to 1.4 cm/s on optimized Ga₂O₃ passivated samples before and after SiNx capping. We also show an improvement in the passivation of boron diffused p+ surfaces over previously reported data, measuring a recombination parameter (J₀) of 26 fA/cm² on a Ga₂O₃ passivated 85 Ω/sq boron diffusion, approaching the Auger limit of ~21 fA/cm² for this diffusion. In addition, we show that initial studies on the thermal stability of the Ga₂O₃/SiNₓ stack indicate that it is compatible with conventional screen-printed metallization firing procedures.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rights© 2016 IEEE.
dc.sourceIEEE Journal of Photovoltaics
dc.titleSilicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
dc.typeJournal article
local.identifier.citationvolume6
dc.date.issued2016
local.publisher.urlhttp://www.ieee.org/index.html
local.type.statusPublished Version
local.contributor.affiliationAllen, T., Research School of Engineering, The Australian National University
local.contributor.affiliationWan, Y. Y., Research School of Engineering, The Australian National University
local.contributor.affiliationCuevas, A., Research School of Engineering, The Australian National University
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage900
local.bibliographicCitation.lastpage905
local.identifier.doi10.1109/JPHOTOV.2016.2566881
CollectionsANU Research Publications

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