Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
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Allen, Thomas G.; Wan, Yimao Y.; Cuevas, Andres
Description
Advances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of...[Show more]
dc.contributor.author | Allen, Thomas G. | |
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dc.contributor.author | Wan, Yimao Y. | |
dc.contributor.author | Cuevas, Andres | |
dc.date.accessioned | 2016-09-07T06:18:19Z | |
dc.date.available | 2016-09-07T06:18:19Z | |
dc.identifier.issn | 2156-3381 | |
dc.identifier.uri | http://hdl.handle.net/1885/108664 | |
dc.description.abstract | Advances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNₓ). On 1.6 Ωcm p-type wafers, we measure an improvement in the upper limit surface recombination velocity (Seff,UL) from 2.5 to 1.4 cm/s on optimized Ga₂O₃ passivated samples before and after SiNx capping. We also show an improvement in the passivation of boron diffused p+ surfaces over previously reported data, measuring a recombination parameter (J₀) of 26 fA/cm² on a Ga₂O₃ passivated 85 Ω/sq boron diffusion, approaching the Auger limit of ~21 fA/cm² for this diffusion. In addition, we show that initial studies on the thermal stability of the Ga₂O₃/SiNₓ stack indicate that it is compatible with conventional screen-printed metallization firing procedures. | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.rights | © 2016 IEEE. | |
dc.source | IEEE Journal of Photovoltaics | |
dc.title | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride | |
dc.type | Journal article | |
local.identifier.citationvolume | 6 | |
dc.date.issued | 2016 | |
local.publisher.url | http://www.ieee.org/index.html | |
local.type.status | Published Version | |
local.contributor.affiliation | Allen, T., Research School of Engineering, The Australian National University | |
local.contributor.affiliation | Wan, Y. Y., Research School of Engineering, The Australian National University | |
local.contributor.affiliation | Cuevas, A., Research School of Engineering, The Australian National University | |
local.bibliographicCitation.issue | 4 | |
local.bibliographicCitation.startpage | 900 | |
local.bibliographicCitation.lastpage | 905 | |
local.identifier.doi | 10.1109/JPHOTOV.2016.2566881 | |
Collections | ANU Research Publications |
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