Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
Advances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
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