Skip navigation
Skip navigation

Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride

Allen, Thomas G.; Wan, Yimao Y.; Cuevas, Andres


Advances in the passivation of p-type and p⁺ surfaces have been one of the main developments in crystalline silicon solar cell technology in recent years, enabling significant progress in p-type solar cells with partial rear contacts, and n-type solar cells with front-side boron diffusions. In this contribution, we demonstrate improvements in the passivation of p-type and boron diffused p+ surfaces with plasma-enhanced atomic layer deposition (PEALD) gallium oxide (Ga₂O₃) with the addition of...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2016.2566881


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator