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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ

Feng, Ruixing

Description

It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace Si as the channel material to maintain CMOS device performance improvement. In is one of the most promising p-type dopant in Ge and Si1-xGex. Hence, this thesis has contributed to the field of semiconductors by performing systematic studies on the structural and electrical properties of In...[Show more]

CollectionsOpen Access Theses
Date published: 2016
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/107100
DOI: 10.25911/5d778a9d54c49

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