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Enhanced electrical activation in In-implanted Ge by C co-doping

Feng, Ruixing; Kremer, Felipe; Sprouster, D. J.; Mirzaei, Sahar; Decoster, Stefan; Glover, C J; Medling, Scott; Pereira, Lino; Russo, Salvy P; Ridgway, Mark C

Description

At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/103671
Source: Applied Physics Letters
DOI: 10.1063/1.4936331

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