Enhanced electrical activation in In-implanted Ge by C co-doping
At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Access Rights:||Open Access|
|01_Feng_Enhanced_electrical_activation_2015.pdf||1.62 MB||Adobe PDF|
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