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Structural and electrical properties of In-implanted Ge

Feng, Ruixing; Kremer, Felipe; Sprouster, D. J.; Mirzaei, Sahar; Decoster, Stefan; Glover, Chris; Medling, Scott; Russo, Salvy P; Ridgway, Mark C

Description

We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/103670
Source: Journal of Applied Physics
DOI: 10.1063/1.4934200

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