Allen, Thomas; Ernst, Marco; Samundsett, Christian; Cuevas, Andres
Gallium oxide (Ga2O3 ) deposited by plasmaenhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm−2 eV−1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga2O3 is used as a gallium source in a laser-doping process,...[Show more]
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