Passivated contacts to laser doped p+ and n+ regions
In this work, tunnel SiO2/a-Si:H stacks are trialed as passivated contacts to laser doped pþ and nþ regions. The passivation performance and contact resistivity are investigated as a function of the tunnel SiO2 thickness and annealing condition. We find that the SiO2/a-Si:H stack provides excellent passivation to laser doped nþ regions, with corresponding low recombination current density (Jo) values. A lower level of surface passivation is achieved by the SiO2/a-Si:H stack on laser doped pþ...[Show more]
|Collections||ANU Research Publications|
|Source:||Solar Energy Materials and Solar Cells|
|01_Yang_Passivated_contacts_to_laser_2015.pdf||1.92 MB||Adobe PDF||Request a copy|
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