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Passivated contacts to laser doped p+ and n+ regions

Yang, Xinbo; Bullock, James; Xu, Lujia; Bi, Qunyu (Sarah); Surve, Sachin; Ernst, Marco; Weber, Klaus


In this work, tunnel SiO2/a-Si:H stacks are trialed as passivated contacts to laser doped pþ and nþ regions. The passivation performance and contact resistivity are investigated as a function of the tunnel SiO2 thickness and annealing condition. We find that the SiO2/a-Si:H stack provides excellent passivation to laser doped nþ regions, with corresponding low recombination current density (Jo) values. A lower level of surface passivation is achieved by the SiO2/a-Si:H stack on laser doped pþ...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2015.03.026


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