In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation
Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique. Quantitative analyses of the generated in situ Raman maps provide unique insight into the phase behavior of as-implanted a-Si. In particular, the occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as...[Show more]
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|Source:||Physical Review B: Condensed Matter and Materials|
|01_Gerbig_%3Ci%3EIn_situ%3C%2Fi%3E_spectroscopic_2015.pdf||769.14 kB||Adobe PDF||Request a copy|
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