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Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

Description

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current densityJ0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused siliconsurfaces, respectively. The J0 on n-type 10 Ω·cm wafers is further reduced to...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/103569
Source: Applied Physics Letters
DOI: 10.1063/1.4937732

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