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Room temperature GaAsSb single nanowire infrared photodetectors

Li, Ziyuan; Yuan, Xiaoming; Fu, Lan; Peng, Kun; Wang, Fan; Fu, Xiao; Caroff, Philippe; White, Thomas; Jagadish, Chennupati; Tan, Hark Hoe


Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm2 V-1 s-1). Under light...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/0957-4484/26/44/445202


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