Skip navigation
Skip navigation

Room temperature GaAsSb single nanowire infrared photodetectors

Li, Ziyuan; Yuan, Xiaoming; Fu, Lan; Peng, Kun; Wang, Fan; Fu, Xiao; Caroff, Philippe; White, Thomas; Jagadish, Chennupati; Tan, Hark Hoe

Description

Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm2 V-1 s-1). Under light...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/103314
Source: Nanotechnology
DOI: 10.1088/0957-4484/26/44/445202

Download

File Description SizeFormat Image
01_Li_Room_temperature_GaAsSb_single_2015.pdf1.18 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator