Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon
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Sio, Hang Cheong (Kelvin); Phang, Sieu Pheng; Trupke, Thorsten; MacDonald, Daniel
Description
We compare the recombination properties of a large number of grain boundaries in multicrystalline silicon wafers with different contamination levels and investigate their response to phosphorous gettering and hydrogenation. The recombination activity of a grain boundary is quantified in terms of the effective surface recombination velocity S<inf>GB</inf> based on photoluminescence imaging and 2-D modeling of the emitted photoluminescence signal. Our results show that varying impurity levels...[Show more]
Collections | ANU Research Publications |
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Date published: | 2015 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/103221 |
Source: | IEEE Journal of Photovoltaics |
DOI: | 10.1109/JPHOTOV.2015.2455341 |
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01_Sio_Impact_of_Phosphorous_2015.pdf | 824.2 kB | Adobe PDF | Request a copy |
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