Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon
We compare the recombination properties of a large number of grain boundaries in multicrystalline silicon wafers with different contamination levels and investigate their response to phosphorous gettering and hydrogenation. The recombination activity of a grain boundary is quantified in terms of the effective surface recombination velocity S<inf>GB</inf> based on photoluminescence imaging and 2-D modeling of the emitted photoluminescence signal. Our results show that varying impurity levels...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
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