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Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

Tang, Kun; Gu, Ran; Gu, Shulin; Ye, Jiandong; Zhu, Shunming; Yao, Zhengrong; Xu, Zhonghua; Zheng, Youdou

Description

In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zni) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zni clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zni clusters. Meanwhile,...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/103051
Source: Journal of Applied Physics
DOI: 10.1063/1.4916785

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