Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
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Chen, Yujie; Burgess, Timothy; An, Xianghai; Mai, Yiu-Wing; Zou, Jin; Ringer, Simon P.; Jagadish, Chennupati; Liao, Xiao-Zhou; Tan, Hark Hoe
Description
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young’s moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ...[Show more]
dc.contributor.author | Chen, Yujie | |
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dc.contributor.author | Burgess, Timothy | |
dc.contributor.author | An, Xianghai | |
dc.contributor.author | Mai, Yiu-Wing | |
dc.contributor.author | Zou, Jin | |
dc.contributor.author | Ringer, Simon P. | |
dc.contributor.author | Jagadish, Chennupati | |
dc.contributor.author | Liao, Xiao-Zhou | |
dc.contributor.author | Tan, Hark Hoe | |
dc.date.accessioned | 2016-06-14T23:19:31Z | |
dc.identifier.issn | 1530-6984 | |
dc.identifier.uri | http://hdl.handle.net/1885/102929 | |
dc.description.abstract | Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young’s moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young’s moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young’s modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs. | |
dc.publisher | American Chemical Society | |
dc.source | Nano Letters | |
dc.title | Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 16 | |
dc.date.issued | 2016 | |
local.identifier.absfor | 020400 - CONDENSED MATTER PHYSICS | |
local.identifier.absfor | 091200 - MATERIALS ENGINEERING | |
local.identifier.absfor | 100700 - NANOTECHNOLOGY | |
local.identifier.ariespublication | U3488905xPUB11761 | |
local.type.status | Published Version | |
local.contributor.affiliation | Chen, Yujie, The University of Sydney | |
local.contributor.affiliation | Burgess, Timothy, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | An, Xianghai, The University of Sydney | |
local.contributor.affiliation | Mai, Yiu-Wing, University of Sydney | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Zou, Jin, University of Queensland | |
local.contributor.affiliation | Ringer, Simon P., University of Sydney | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Liao, Xiao-Zhou, University of Sydney | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 3 | |
local.bibliographicCitation.startpage | 1911 | |
local.bibliographicCitation.lastpage | 1916 | |
local.identifier.doi | 10.1021/acs.nanolett.5b05095 | |
dc.date.updated | 2016-06-14T08:40:21Z | |
local.identifier.scopusID | 2-s2.0-84960474789 | |
Collections | ANU Research Publications |
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