Simulation and suppression of the gas phase pre-reaction in metal-organic chemical vapor deposition of ZnO

Abstract

The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.