Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
In this study, the authors investigate the evolution of the structural and electrical properties of ZnO epilayers grown by the metal-organic chemical vapor deposition method on c -sapphire substrates. The inserting of a low-temperature ZnO buffer layer not only significantly improves the structural quality of the high-temperature (HT)-grown ZnO epilayer on a sapphire substrate but also results in high background electron concentration in it from the Hall-effect measurement. After subtracting...[Show more]
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|Source:||Journal of Vacuum Science and Technology A|
|01_Tang_Influence_of_thermally_2011.pdf||809.38 kB||Adobe PDF||Request a copy|
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