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Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

Wu, Kong-Ping; Gu, Shulin; Tang, Kun; Ye, Jiandong; Zhu, Shunming; Zhou, Mengran; Huang, Yourui; Xu, Mingxiang; Zhang, Rong; Zheng, Youdou

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The influences of Mn doping on the structural quality of the ZnxMn1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for ZnxMn1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different TC should explain that the magnetic transition in field-cooled magnetization of...[Show more]

dc.contributor.authorWu, Kong-Ping
dc.contributor.authorGu, Shulin
dc.contributor.authorTang, Kun
dc.contributor.authorYe, Jiandong
dc.contributor.authorZhu, Shunming
dc.contributor.authorZhou, Mengran
dc.contributor.authorHuang, Yourui
dc.contributor.authorXu, Mingxiang
dc.contributor.authorZhang, Rong
dc.contributor.authorZheng, Youdou
dc.date.accessioned2016-06-14T23:19:17Z
dc.identifier.issn0304-8853
dc.identifier.urihttp://hdl.handle.net/1885/102830
dc.description.abstractThe influences of Mn doping on the structural quality of the ZnxMn1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for ZnxMn1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different TC should explain that the magnetic transition in field-cooled magnetization of Zn1-xMnxO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.
dc.publisherElsevier
dc.sourceJournal of Magnetism and Magnetic Materials
dc.subjectKeywords: Alloy film; Chemical compositions; Co-doped; Diluted magnetic semiconductors; Ferromagnetic transitions; Field-cooled magnetizations; Hall effect measurement; Low temperatures; Magnetic transitions; Mn content; Mn oxides; Mn-doping; P-d exchange interacti Diluted magnetic semiconductor; Room-temperature ferromagnetism; Zn xMn 1-xO:N
dc.titleTemperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume324
dc.date.issued2012
local.identifier.absfor090000 - ENGINEERING
local.identifier.ariespublicationf5625xPUB6698
local.type.statusPublished Version
local.contributor.affiliationWu, Kong-Ping, Anhui University of Science and Technology,
local.contributor.affiliationGu, Shulin, Nanjing University
local.contributor.affiliationTang, Kun, Nanjing University
local.contributor.affiliationYe, Jiandong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhu, Shunming, Nanjing University
local.contributor.affiliationZhou, Mengran, Anhui University of Science and Technology
local.contributor.affiliationHuang, Yourui, Anhui University of Science and Technology
local.contributor.affiliationXu, Mingxiang, Southeast University
local.contributor.affiliationZhang, Rong, Nanjing University
local.contributor.affiliationZheng, Youdou, Nanjing University
local.description.embargo2037-12-31
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage1649
local.bibliographicCitation.lastpage1654
local.identifier.doi10.1016/j.jmmm.2011.12.030
dc.date.updated2016-06-14T08:36:40Z
local.identifier.scopusID2-s2.0-84855703707
CollectionsANU Research Publications

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