Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

Abstract

The influences of Mn doping on the structural quality of the ZnxMn1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for ZnxMn1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different TC should explain that the magnetic transition in field-cooled magnetization of Zn1-xMnxO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.