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Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC

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Leech, Patrick W; Holland, A S; Reeves, G K; Pan, Yue; Ridgway, Mark C; Tanner, Phillip

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The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρ <inf>c</inf>, were performed using the two-contact circular test structure. The magnitude of ρ<inf>c</inf> for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 × 10-6 Ω.cm2. The value of ρ<inf>c</inf> increased significantly at an implant dose of 1 × 1015 ions/cm2. The dependence of...[Show more]

dc.contributor.authorLeech, Patrick W
dc.contributor.authorHolland, A S
dc.contributor.authorReeves, G K
dc.contributor.authorPan, Yue
dc.contributor.authorRidgway, Mark C
dc.contributor.authorTanner, Phillip
dc.coverage.spatialTBC
dc.date.accessioned2016-06-14T23:19:07Z
dc.date.createdNovember 30-December 5 2014
dc.identifier.isbn9781510806238
dc.identifier.urihttp://hdl.handle.net/1885/102757
dc.description.abstractThe effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρ <inf>c</inf>, were performed using the two-contact circular test structure. The magnitude of ρ<inf>c</inf> for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 × 10-6 Ω.cm2. The value of ρ<inf>c</inf> increased significantly at an implant dose of 1 × 1015 ions/cm2. The dependence of ρ<inf>c</inf> on ion dose has been measured using both C and P implant species
dc.publisherConference Organising Committee
dc.relation.ispartofseries2014 MRS Fall Meeting
dc.sourceMaterials Research Society Symposium Proceedings
dc.titleEffect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2015
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.ariespublicationa383154xPUB3288
local.type.statusPublished Version
local.contributor.affiliationLeech, Patrick W, RMIT University
local.contributor.affiliationHolland, A S, RMIT University
local.contributor.affiliationReeves, G K, RMIT University
local.contributor.affiliationPan, Yue, RMIT University
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTanner, Phillip, Griffith University
local.description.embargo2037-12-31
local.bibliographicCitation.startpage39
local.bibliographicCitation.lastpage44
local.identifier.doi10.1557/opl.2015.284
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-06-14T08:32:34Z
local.identifier.scopusID2-s2.0-84938842677
CollectionsANU Research Publications

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