Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC

Abstract

The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρ <inf>c</inf>, were performed using the two-contact circular test structure. The magnitude of ρ<inf>c</inf> for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 × 10-6 Ω.cm2. The value of ρ<inf>c</inf> increased significantly at an implant dose of 1 × 1015 ions/cm2. The dependence of ρ<inf>c</inf> on ion dose has been measured using both C and P implant species