Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
Amorphous silicon oxynitride (SiO<inf>x</inf>N<inf>y</inf>) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS)....[Show more]
|Collections||ANU Research Publications|
|Source:||EPJ Web of Conferences|
|Access Rights:||Open Access|
|01_Santiago_Characterization_of_ion_track_2015.pdf||1.29 MB||Adobe PDF|
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