Dispersion engineered Ge₁₁.₅As₂₄Se₆₄.₅ nanowires with a nonlinear parameter of 136W⁻¹m⁻¹ at 1550nm
We have fabricated 630 × 500nm nanowires from Ge₁₁.₅As₂₄Se₆₄.₅ chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W⁻¹m⁻¹ at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.
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