Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55 μm for ultra-fast nonlinear signal processing
Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H-W) at 1.55 μm. The nonlinear index n2 and 3PA coefficient were measured to be 22 × 10⁻¹⁷m²/W and 5.0 × 10⁻²⁶ m³/W² respectively at 1.55 μm by using the z-scan method. This indicates that the figure of merit (FOM) of this material is intensity dependent. A value FOM>60 is predicted at intensities below 0.5 GW/cm² which is the maximum practical...[Show more]
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