Transient optical properties of dielectrics and semiconductors excited by an ultrashort laser pulse
The transient permittivity of dielectrics and semiconductors excited by a powerful ultrashort laser pulse is introduced here in explicit form, which shows a decreasing contribution of valence electrons and an increasing contribution of free carriers with rising laser fluence. We describe the evolution of permittivity from the initial state up to transformation into plasma before ablation. A two orders of magnitude change in the electrons’ collision rate during this transition is taken into...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of the Optical Society of America B|
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