Large phase shifts in As₂S₃ waveguides for all-optical processing devices
A large phase shift of 4.7𝜋 at 1.53 𝜇m has been observed from a low-loss (0.2 dB⁄cm), small-core As₂S3₃ waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As₂S₃ films at 1.53 𝜇m, far below the material bandgap.
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