Skip navigation
Skip navigation

An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon

Ruffell, S.; Bradby, J. E.; Williams, J. S.; Warren, O. L.

Description

An in situ electrical measurement technique for the investigation of nanoindentation using a Hysitron Triboindenter is described, together with details of experiments to address some technical issues associated with the technique. Pressure-induced phase transformations in silicon during indentation are of particular interest but are not fully understood. The current in situ electrical characterization method makes use of differences in electrical properties of the phase-transformed silicon to...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/101058
Source: Journal of Materials Research
DOI: 10.1557/jmr.2007.0100

Download

There are no files associated with this item.


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator