An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon
An in situ electrical measurement technique for the investigation of nanoindentation using a Hysitron Triboindenter is described, together with details of experiments to address some technical issues associated with the technique. Pressure-induced phase transformations in silicon during indentation are of particular interest but are not fully understood. The current in situ electrical characterization method makes use of differences in electrical properties of the phase-transformed silicon to...[Show more]
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|Source:||Journal of Materials Research|
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