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Structural characterization of B-doped diamond nanoindentation tips

Sprouster, David J.; Ruffell, Simon; Bradby, Jodie E.; Williams, James S.; Lockrey, Mark N.; Phillips, Matthew R.; Major, Ryan C.; Warren, Oden L.

Description

We report on the electrical and structural properties of boron-doped diamond tips commonly used for in-situ electromechanical testing during nanoindentation. The boron dopant environment, as evidenced by cathodoluminescence (CL) microscopy, revealed significantly different boron states within each tip. Characteristic emission bands of both electrically activated and nonelectrically activated boron centers were identified in all boron-doped tips. Surface CL mapping also revealed vastly different...[Show more]

dc.contributor.authorSprouster, David J.
dc.contributor.authorRuffell, Simon
dc.contributor.authorBradby, Jodie E.
dc.contributor.authorWilliams, James S.
dc.contributor.authorLockrey, Mark N.
dc.contributor.authorPhillips, Matthew R.
dc.contributor.authorMajor, Ryan C.
dc.contributor.authorWarren, Oden L.
dc.date.accessioned2016-04-18T23:28:46Z
dc.date.available2016-04-18T23:28:46Z
dc.identifier.issn0884-2914
dc.identifier.urihttp://hdl.handle.net/1885/101053
dc.description.abstractWe report on the electrical and structural properties of boron-doped diamond tips commonly used for in-situ electromechanical testing during nanoindentation. The boron dopant environment, as evidenced by cathodoluminescence (CL) microscopy, revealed significantly different boron states within each tip. Characteristic emission bands of both electrically activated and nonelectrically activated boron centers were identified in all boron-doped tips. Surface CL mapping also revealed vastly different surface properties, confirming a high amount of nonelectrically activated boron clusters at the tip surface. Raman microspectroscopy analysis showed that structural characteristics at the atomic scale for boron-doped tips also differ significantly when compared to an undoped diamond tip. Furthermore, the active boron concentration, as inferred via the Raman analysis, varied greatly from tip-to-tip. It was found that tips (or tip areas) with low overall boron concentration have a higher number of electrically inactive boron, and thus non-Ohmic contacts were made when these tips contacted metallic substrates. Conversely, tips that have higher boron concentrations and a higher number of electrically active boron centers display Ohmic-like contacts. Our results demonstrate the necessity to understand and fully characterize the boron environments, boron concentrations, and atomic structure of the tips prior to performing in situ electromechanical experiments, particularly if quantitative electrical data are required.
dc.description.sponsorshipThis research was supported by an Australian Research Council Linkage project. JB is the recipient of an Australian Research Council QEII Fellowship.
dc.publisherCambridge University Press
dc.rights© Materials Research Society 2011
dc.sourceJournal of Materials Research
dc.subjectDiamond
dc.subjectElectrical properties
dc.subjectNanoindentation
dc.titleStructural characterization of B-doped diamond nanoindentation tips
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume26
dc.date.issued2011
local.identifier.absfor020499
local.identifier.ariespublicationu4153526xPUB58
local.publisher.urlhttp://www.cambridge.org/
local.type.statusPublished Version
local.contributor.affiliationSprouster, David, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationLockrey, Mark N, University of Technology Sydney, Australia
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney, Australia
local.contributor.affiliationMajor, R C, Hysitron Inc, United States of America
local.contributor.affiliationWarren, O L, Hysitron Inc, United States of America
local.bibliographicCitation.issue24
local.bibliographicCitation.startpage3051
local.bibliographicCitation.lastpage3057
local.identifier.doi10.1557/jmr.2011.377
local.identifier.absseo970102
dc.date.updated2016-06-14T08:59:06Z
local.identifier.scopusID2-s2.0-84867332784
local.identifier.thomsonID000299875900007
CollectionsANU Research Publications

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