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Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

Bayu Aji, Leonardus B.; Ruffell, S.; Haberl, Bianca; Bradby, J. E.; Williams, J. S.

Description

The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100%...[Show more]

dc.contributor.authorBayu Aji, Leonardus B.
dc.contributor.authorRuffell, S.
dc.contributor.authorHaberl, Bianca
dc.contributor.authorBradby, J. E.
dc.contributor.authorWilliams, J. S.
dc.date.accessioned2016-04-15T06:30:30Z
dc.date.available2016-04-15T06:30:30Z
dc.identifier.issn0884-2914
dc.identifier.urihttp://hdl.handle.net/1885/101040
dc.description.abstractThe probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100% at a temperature of 340 °C, a temperature well before the temperature where the average bond-angle distortion is fully minimized. This suggests that multiple processes are occurring during full relaxation.
dc.description.sponsorshipThe authors wish to acknowledge the ANFF for the ion implantation facilities and the Australian Research Council for financial support. JEB gratefully acknowledges the ARC for a QEII fellowship.
dc.publisherCambridge University Press
dc.rights© Materials Research Society 2013
dc.sourceJournal of Materials Research
dc.subjectKeywords: Amorphous silicon (a-Si); Annealing temperatures; Bond-angle distortion; Degree of relaxation; Indentation testing; Indentation-induced phase transformation; Raman microspectroscopy; Unloading curves; Amorphous silicon; Intermetallics; Probability; Silico
dc.titleCorrelation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume28
dc.date.issued2013
local.identifier.absfor020406
local.identifier.ariespublicationf5625xPUB3281
local.publisher.urlhttp://www.cambridge.org/
local.type.statusPublished Version
local.contributor.affiliationBayu Aji, Leonardus Bimo, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationHaberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue08
local.bibliographicCitation.startpage1056
local.bibliographicCitation.lastpage1060
local.identifier.doi10.1557/jmr.2013.32
local.identifier.absseo970102
dc.date.updated2016-06-14T08:36:10Z
local.identifier.scopusID2-s2.0-84876376616
local.identifier.thomsonID000317587600006
CollectionsANU Research Publications

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