Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon
The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100%...[Show more]
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|Source:||Journal of Materials Research|
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