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The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe
TypeJournal article
Date Published2010
Date Created-
01_Jolley_Electron-hole_recombination_2010.pdf.jpg

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Author(s)Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati
TypeJournal article
Date Published23-Sep-2010
Date Created-
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