Open Research at ANU
III-V compound semiconductor nanowires for optoelectronic device applications
III-V compound semiconductor nanowires for optoelectronic devices
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
Growth and properties of III-V compound semiconductor heterostructure nanowires
Author(s) | Gao, Qiang; Jackson, Howard E; Smith, Leigh M; Yarrison-Rice, Jan M; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe![]() |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
Compound Semiconductor Nanowires for Optoelectronic Device Applications
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