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01_Fu_Suppression_of_interdiffusion_2002.pdf.jpg

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

Author(s)Fu, Lan; Wong-Leung, J.; Deenapanray, P. N. K.; Jagadish, C.; Gong, Bin; Lamb, R. N.; Cohen, R. M.; Reichert, W.; Dao, Lap Van; Gal, M.; Tan, Hark Hoe
TypeJournal article
Date Published1-Oct-2002
Date Created-
01_Deenapanray_Impurity-free_disordering_2002.pdf.jpg

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Author(s)Deenapanray, Prakash N. K; Gong, Bin; Lamb, R. N; Martin, A; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published10-Jun-2002
Date Created-

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers

Author(s)Lysevych, M; Tan, Hark Hoe; Karouta, F; Fu, Lan; Jagadish, C.
TypeJournal article
Date Published28-Mar-2013
Date Created-
01_Jolley_The_conduction_band_absorption_2012.pdf.jpg

The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

Author(s)Jolley, G; McKerracher, I; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published26-Jun-2012
Date Created-
01_Jolley_Influence_of_quantum_well_and_2007.pdf.jpg

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published25-Oct-2007
Date Created-
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C.; Vukmirović, N.; Harrison, P.; Tan, Hark Hoe
TypeJournal article
Date Published15-Aug-2007
Date Created-
01_Jolley_A_study_of_quantum_well_solar_2013.pdf.jpg

A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination

Author(s)Jolley, G.; Faraone, L.; Fu, Lan; Lu, H. F.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published29-May-2013
Date Created-
01_Barik_Impurity-free_disordering_of_2007.pdf.jpg

Impurity-free disordering of InAs/InP quantum dots

Author(s)Barik, S; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-Jun-2007
Date Created-
01_Fu_Suppression_of_interdiffusion_2003.pdf.jpg

Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

Author(s)Fu, Lan; Lever, P.; Jagadish, C.; Reece, P.; Gal, M.; Tan, Hark Hoe
TypeJournal article
Date Published21-Apr-2003
Date Created-
01_Hakkarainen_Spatially_resolved_2010.pdf.jpg

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

Author(s)Hakkarainen, T; Douhéret, O; Anand, S; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published2010
Date Created-

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