Point defect engineered Si sub-bandgap light-emitting diode
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.
|Collections||ANU Research Publications|
|Bao_Point2007.pdf||103.08 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.