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Point defect engineered Si sub-bandgap light-emitting diode

Bao, Jiming; Tabbal, Malek; Kim, Taegon; Charnvanichborikarn, Supakit; Williams, James S; Aziz, Michael; Capasso, Federico


We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

CollectionsANU Research Publications
Date published: 2007-05-16
Type: Journal article
Source: Optics Express
DOI: 10.1364/OE.15.006727


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